Method for manufacturing SOI substrate

Details Method for manufacturing SOI substrate Method for manufacturing SOI substrate

2007-02-08

2010-11-16

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C257SE21320, C257SE21568

Reexamination Certificate

active

07833878

ABSTRACT:
A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation treatment, and the two substrates are bonded together. The bonded substrate composed of the single-crystal Si substrate and the transparent insulating substrate thus obtained is mounted on a susceptor and is placed under an infrared lamp. Light having a wave number range including an Si—H bond absorption band is irradiated at the bonded substrate for a predetermined length of time to break the Si—H bonds localized within a “microbubble layer” in the hydrogen ion-implanted layer, thereby separating a silicon thin film layer.

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