Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2009-01-26
2010-12-28
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S149000, C438S150000, C438S455000, C438S459000, C438S479000, C438S528000, C257S347000
Reexamination Certificate
active
07858495
ABSTRACT:
A method for manufacturing an SOI substrate is provided in which adhesiveness between a single crystal semiconductor substrate and a semiconductor substrate is improved; bonding defects are reduced; and sufficient bonding strength is provided in a bonding step and also in a process of manufacturing a semiconductor device. An insulating film including halogen is formed on a single crystal semiconductor substrate side in which an embrittlement layer is formed. The insulating film including halogen undergoes a plasma treatment. The insulating film including halogen and a face of a semiconductor substrate are bonded so as to face each other. A thermal treatment is performed to split the single crystal semiconductor substrate along the embrittlement layer, thereby separating the single crystal semiconductor substrate into a single crystal semiconductor substrate and the semiconductor substrate to which a single crystal semiconductor layer is bonded. The single crystal semiconductor layer bonded to the semiconductor substrate undergoes a planarization treatment.
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Ohnuma Hideto
Yamazaki Shunpei
Au Bac H
Picardat Kevin M
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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