Method for manufacturing SOI substrate

Details Method for manufacturing SOI substrate Method for manufacturing SOI substrate

2011-05-17

2011-05-17

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S143000, C438S458000, C438S480000, C438S481000, C438S509000, C257SE21561, C257SE21563, C257SE21564, C257SE21567, C257SE21568

Reexamination Certificate

active

07943414

ABSTRACT:
An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

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