Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-06-28
2011-06-28
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S425000, C438S435000, C438S439000, C257SE21540, C257SE21206, C257SE21545
Reexamination Certificate
active
07968421
ABSTRACT:
Manufacturing a semiconductor device includes defining bulb-type trenches having spherical portions in a silicon substrate. Oxide layers are formed in surfaces of spherical portions of the bulb-type trenches by conducting an oxidation process for the silicon substrate having the bulb-type trenches defined therein. An insulation layer is formed on the entire surface of the silicon substrate including the surfaces of the bulb-type trenches, which have the oxide layers formed in the surfaces of the spherical portions thereof. Isolation trenches are defined by etching the insulation layer, whereby SOI structures having the oxide layers interposed between portions of the silicon substrate are formed.
REFERENCES:
patent: 7157350 (2007-01-01), Yang et al.
patent: 7442618 (2008-10-01), Chong et al.
patent: 2007/0032037 (2007-02-01), Yang et al.
patent: 10-0688547 (2007-03-01), None
patent: 10-0772709 (2007-11-01), None
Estrada Michelle
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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