Method for manufacturing single-sided buried strap in...

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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Reexamination Certificate

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07078307

ABSTRACT:
A method for manufacturing a single-ended buried strap used in semiconductor devices is disclosed. According to the present invention, a trench capacitor structure is formed in a semiconductor substrate, wherein the trench capacitor structure has a contact surface lower than a surface of the semiconductor substrate such that a recess is formed. Then, an insulative layer is formed on a sidewall of the recess. Next, impurities are implanted into a portion of the insulative layer, and the impurity-containing insulative layer is thereafter removed such that at least a portion of the contact surface and a portion of sidewall of the recess are exposed. A buried strap is sequentially formed on the exposed sidewall of the recess to be in contact with the exposed contact surface.

REFERENCES:
patent: 6426253 (2002-07-01), Tews et al.
patent: 6426526 (2002-07-01), Divakaruni et al.
patent: 6750116 (2004-06-01), Chen
patent: 6835641 (2004-12-01), Yang et al.
patent: 6916721 (2005-07-01), Heineck et al.
patent: 2004/0029343 (2004-02-01), Seidl et al.
patent: 2005/0020024 (2005-01-01), Goldbach
patent: 2005/0054157 (2005-03-01), Hsu
patent: 2005/0077563 (2005-04-01), Alsmeier
patent: 10205077 (2003-08-01), None

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