Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-07-18
2006-07-18
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
Reexamination Certificate
active
07078307
ABSTRACT:
A method for manufacturing a single-ended buried strap used in semiconductor devices is disclosed. According to the present invention, a trench capacitor structure is formed in a semiconductor substrate, wherein the trench capacitor structure has a contact surface lower than a surface of the semiconductor substrate such that a recess is formed. Then, an insulative layer is formed on a sidewall of the recess. Next, impurities are implanted into a portion of the insulative layer, and the impurity-containing insulative layer is thereafter removed such that at least a portion of the contact surface and a portion of sidewall of the recess are exposed. A buried strap is sequentially formed on the exposed sidewall of the recess to be in contact with the exposed contact surface.
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Lin Shian-Jyh
Yu Chia-Sheng
Bednarek Michael
Geyer Scott B.
Nanya Technology Corp.
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