Method for manufacturing single-side mirror surface wafer

Details Method for manufacturing single-side mirror surface wafer Method for manufacturing single-side mirror surface wafer

2004-12-03

2008-03-04

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C438S745000, C134S001100

Reexamination Certificate

active

07338904

ABSTRACT:
A surface of a semiconductor wafer which has been lapped is ground. This removes a damage caused on the wafer surface during lapping, thereby increasing the flatness of the wafer surface. Next, the wafer is subjected to composite etching and the both surfaces are polished, i.e., subjected to mirror polishing while the wafer rear surface is slightly polished so as to obtain a single-side mirror surface wafer having a difference between the front and the rear surfaces. As compared to mere acid etching or alkali etching, it is possible to manufacture a single-side mirror surface wafer having a higher flatness.

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English Language Abstract of JP 2003-077875.
English Language Abstract of JP 2003-203890.
English Language Abstract of JP 2003-100701.

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