Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2006-06-20
2008-08-12
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S513000, C438S766000, C257SE21320, C257SE21311, C257SE21319, C257SE21321, C257SE21563
Reexamination Certificate
active
07410877
ABSTRACT:
A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form an amorphous layer; and heat-treating the silicon wafer to form a buried oxide layer, wherein in the forming of the amorphous layer, the implantation of oxygen ions is carried out after preheating the silicon wafer to a temperature lower than the heating temperature of the forming of the high oxygen concentration layer. Alternatively, the method for manufacturing a SIMOX wafer includes: in the formation of the high oxygen concentration layer, implanting oxygen ions while heating a silicon wafer at a temperature of 300° C. or more; and in the formation of the amorphous layer, implanting oxygen ions after preheating the silicon wafer to a temperature of less than 300° C.
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Taiwanese Office Action with Search Report from corresponding Taiwanese Patent Application No. 095122315, search completed on Mar. 7, 2008. An English language translation of the Office Action is attached.
Aoki Yoshiro
Kasamatsu Riyuusuke
Nakamura Seiichi
Nishihata Hideki
Kolisch & Hartwell, P.C.
Nhu David
Sumco Corporation
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