Semiconductor device manufacturing: process – Gettering of substrate
Patent
1997-08-26
2000-11-14
Mulpuri, Savitri
Semiconductor device manufacturing: process
Gettering of substrate
H01L 21306
Patent
active
061469807
ABSTRACT:
A method for manufacturing silicon substrates having gettering capability that results in a low complexity manufacturing with a corresponding reduction in the cost of production. The first embodiment of the invention involves the use of a silicon nitride layer as a mask in the etching of the silicon substrate to form the damaged layer. The second embodiment of the invention makes use of a first pad oxide layer as a mask in the etching of the silicon substrate to form the damaged layer. Hence, a single-face etching rather than double-face etching of the silicon substrate is used in the formation of the damaged layer in this invention, so there is no need for the performance of mirror processing operations before subsequent processes.
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Mulpuri Savitri
United Microelectronics Corp.
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