Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-08-08
1999-03-16
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 95, 117 98, 117106, C30B 2502
Patent
active
058824014
ABSTRACT:
A method for manufacturing a silicon single crystal substrate for use of an epitaxial layer growth. The method comprises the steps of: growing a CVD film on a rear surface and a peripheral side portion, of the silicon single crystal substrate; removing a portion of the CVD film on the peripheral side portion in the vicinity of a main surface of the silicon single crystal substrate, which was grown over an end of the peripheral side portion, by an abrasive tape grinding; and thereafter mirror-polishing the main surface of the silicon single crystal substrate.
REFERENCES:
patent: 5429711 (1995-07-01), Watanabe et al.
patent: 5658618 (1997-08-01), Schaffer et al.
patent: 5672185 (1997-09-01), Ryoke
Maruyama Tamotsu
Ose Hiroki
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Method for manufacturing silicon single crystal substrate for us does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing silicon single crystal substrate for us, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing silicon single crystal substrate for us will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-813391