Method for manufacturing silicon single crystal substrate for us

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Other Related Categories

117 95, 117 98, 117106, C30B 2502

Type

Patent

Status

active

Patent number

058824014

Description

ABSTRACT:
A method for manufacturing a silicon single crystal substrate for use of an epitaxial layer growth. The method comprises the steps of: growing a CVD film on a rear surface and a peripheral side portion, of the silicon single crystal substrate; removing a portion of the CVD film on the peripheral side portion in the vicinity of a main surface of the silicon single crystal substrate, which was grown over an end of the peripheral side portion, by an abrasive tape grinding; and thereafter mirror-polishing the main surface of the silicon single crystal substrate.

REFERENCES:
patent: 5429711 (1995-07-01), Watanabe et al.
patent: 5658618 (1997-08-01), Schaffer et al.
patent: 5672185 (1997-09-01), Ryoke

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