Method for manufacturing silicon semiconductor device with a get

Details Method for manufacturing silicon semiconductor device with a get Method for manufacturing silicon semiconductor device with a get

1993-08-27

1995-09-26

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 24, 437 53, H01L 21308

Patent

active

054533856

ABSTRACT:
A method for manufacturing a silicon semiconductor device with a high contamination sensitivity to heavy metals, such as Si-CCD solid state image sensors, wherein a gettering site is formed in an element isolation region present near an element region or the like, a non-depleted n.sup.+ or p.sup.+ region, a region to be removed or isolated from the surface of a semiconductor substrate in a subsequent process. This method makes it possible to form semiconductor devices while reducing the contamination of silicon substrate surfaces by heavy metals. The method also realizes the manufacture of silicon semiconductor devices exhibiting a stable device characteristic and having reduced defects.

REFERENCES:
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 5098852 (1992-03-01), Niki et al.

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