Method for manufacturing silicon layer having impurity diffusion

Details Method for manufacturing silicon layer having impurity diffusion Method for manufacturing silicon layer having impurity diffusion

1994-12-09

1996-06-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 83, 437101, 437233, 117 89, H01L 2122

Patent

active

055255400

ABSTRACT:
In a method for manufacturing a silicon layer, a silicon layer is grown simultaneously with doping impurities into the silicon layer. Then, an impurity diffusion preventing layer is grown by interrupting this silicon layer growing step at least one time.

REFERENCES:
patent: 4685199 (1987-08-01), Jastrzebski
patent: 4874464 (1989-10-01), Goodwin et al.
patent: 4990464 (1991-02-01), Baumgart et al.
patent: 5256566 (1993-10-01), Bailey
patent: 5266504 (1993-11-01), Blouse et al.

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