Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2011-08-09
2011-08-09
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S268000, C438S285000, C438S767000, C257SE21409
Reexamination Certificate
active
07993966
ABSTRACT:
A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×1020cm−3.
REFERENCES:
patent: 5736753 (1998-04-01), Ohno et al.
patent: 5976936 (1999-11-01), Miyajima et al.
patent: 5990605 (1999-11-01), Yoshikawa et al.
patent: 6020600 (2000-02-01), Miyajima et al.
patent: 6573534 (2003-06-01), Kumar et al.
patent: 6764963 (2004-07-01), Fukuda et al.
patent: 6864507 (2005-03-01), Yokogawa et al.
patent: 7338869 (2008-03-01), Fukuda et al.
patent: 2002/0102358 (2002-08-01), Das et al.
patent: 2003/0013266 (2003-01-01), Fukuda et al.
patent: 2004/0183080 (2004-09-01), Kusumoto et al.
patent: 2005/0064639 (2005-03-01), Hisada et al.
patent: 2005/0245034 (2005-11-01), Fukuda et al.
patent: 2006/0197152 (2006-09-01), Tokano et al.
patent: 2008/0203400 (2008-08-01), Fukuda et al.
patent: A-10-112460 (1998-04-01), None
patent: A-11-031691 (1999-02-01), None
patent: A-2000-286258 (2000-10-01), None
patent: A-2001-053293 (2001-02-01), None
patent: A-2004-319619 (2004-11-01), None
patent: A-2005-166930 (2005-06-01), None
Office Action dated Jul. 18, 2008 in corresponding Chinese patent application No. 200610126666.7 (and English translation).
Office Action issued from the Swedish Patent Office dated May 16, 2008 in the corresponding Swedish Patent Application No. 0601692-7 (English translation enclosed.).
Office Action dated Apr. 17, 2009 in corresponding Chinese patent application No. 2006101266667 (and English translation).
Office Action dated Mar. 26, 2009 from German Patent Office in the corresponding DE Application No. 102006040818.7 (and English Translation).
Third Office Action dated Oct. 9, 2009 in corresponding Chinese patent application No. 2006101266667 (and English translation).
Office Action mailed May 20, 2010 in corresponding U.S. Appl. No. 12/219,007.
Office Action mailed Sep. 17, 2010 in corresponding U.S. Appl. No. 12/219,007.
Office Action dated Nov. 9, 2010 from the German Patent Office in corresponding German patent application No. 10 2006 040 818.7.
Office Action mailed Feb. 16, 2011 in corresponding U.S. Appl. No. 12/219,007.
Notice of Reason for Refusal mailed Mar. 22, 2011 from the Japan Patent Office corresponding to Japanese patent application No. 2006-162448.
Endo Takeshi
Kawai Jun
Okuno Eiichi
Yamamoto Kensaku
Yamamoto Tsuyoshi
Denso Corporation
Nguyen Thanh
Posz Law Group , PLC
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