Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-10-11
2005-10-11
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S424000, C438S437000
Reexamination Certificate
active
06953734
ABSTRACT:
The method for manufacturing an STI in a semiconductor device with an enhanced gap-fill property and leakage property is disclosed by introducing a nitridation process instead of forming a liner nitride. The method includes steps of: preparing a semiconductor substrate obtained by a predetermined process on which a pad oxide and a pad nitride are formed on predetermined locations thereof; forming an isolation trench with a predetermined depth in the semiconductor substrate; forming a wall oxide on the trench; forming a liner oxide on the wall oxide and an exposed surface of the pad nitride; carrying out a nitridation process for forming a nitrided oxide; forming an insulating layer over the resultant structure, wherein the isolation trench is filled with the insulating layer; and planarizing a top face of the insulating layer.
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Lim Jae-Eun
Sohn Yong-Sun
Hynix / Semiconductor Inc.
Isaac Stanetta
Lebentritt Michael
Mayer Brown Rowe & Maw LLP
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