Semiconductor device manufacturing: process – Chemical etching
Patent
1997-09-30
2000-09-12
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
438694, 438944, 216 12, H01L 21302, B44C 122
Patent
active
061177741
ABSTRACT:
A method of manufacturing a shadow mask by making use of a coating apparatus, wherein a gravure roll 20 mm to 60 mm in diameter is disposed below a metallic thin plate and any supporting member is not disposed at an opposite side portion of the metallic thin plate to be contacted with the gravure roll. An etching resistant liquid is fed onto the gravure roll being rotated in a direction opposite to that of the metallic thin plate and at a peripheral speed of 4 to 25 times as high as that of a feeding speed of the metallic thin plate, and an excessive portion of the etching resistant liquid is wiped away by the doctor blade before the etching resistant liquid is transferred to the metallic thin plate thereby to form an etching resistant layer on the metallic thin plate.
REFERENCES:
patent: 4791881 (1988-12-01), Iwasaki
patent: 4861422 (1989-08-01), Kudou et al.
Patent Abstracts of Japan, vol. 095, No. 002, Mar. 1995, re JP 06 310031A.
Hirahara Sachiko
Nikaido Masaru
Ohtake Yasuhisa
Kabushiki Kaisha Toshiba
Umez-Eronini Lynette T.
Utech Benjamin L.
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