Method for manufacturing semiconductor wafer

Details Method for manufacturing semiconductor wafer Method for manufacturing semiconductor wafer

2010-08-24

2011-10-25

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21568

Reexamination Certificate

active

08043939

ABSTRACT:
To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ions by an ion doping apparatus. H3+ions accelerated by high voltage are separated to be three H+ions at a semiconductor wafer surface, and the H+ions cannot enter deeply. Therefore, H+ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.

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Chinese Office Action (Application No. 200810149494.4) Dated Jun. 9, 2011.

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