Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-09-15
2010-11-09
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568
Reexamination Certificate
active
07829434
ABSTRACT:
To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ions by an ion doping apparatus. H3+ions accelerated by high voltage are separated to be three H+ions at a semiconductor wafer surface, and the H+ions cannot enter deeply. Therefore, H+ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.
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Inada Ko
Iwaki Yuji
Miyanaga Akiharu
Yamazaki Shunpei
Coleman W. David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co. Ltd
Shook Daniel
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