Fishing – trapping – and vermin destroying
Patent
1994-03-28
1996-04-16
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
148DIG95, H01L 2120
Patent
active
055082254
ABSTRACT:
In a method for manufacturing a semiconductor laser diode, producing visible light after growing a p type GaAs contact layer on a p type AlGaInP cladding layer, an n type layer comprising that can be selectively etched with an etchant that does not etch GaAs is grown on the p type GaAs contact layer. After cooling, the n type layer is selectively etched and removed. In this method, a diffusion potential produced at the p-n junction between the p type GaAs contact layer and the n type layer prevents ionized hydrogen from entering the p type AlGaInP cladding layer during cooling, whereby the activation ratio of Zn atoms in the p type AlGaInP cladding layer is increased. Therefore, even if the Zn/III ratio during the growth of the p type AlGaInP cladding layer is low, a semiconductor laser diode with reduced threshold current and improved temperature characteristics is attained. In addition, since the n type layer grown on the p type GaAs contact layer comprises a semiconductor material that can be selectively etched with an etchant that does not etch GaAs, the etching process of the n type layer is carried out with high controllability without adversely affecting the surface of the p type GaAs contact layer, resulting in a highly reliable semiconductor laser diode.
REFERENCES:
patent: 4809287 (1989-02-01), Ohba et al.
patent: 5023880 (1991-06-01), Suzuki et al.
patent: 5058120 (1991-10-01), Nitta et al.
patent: 5143863 (1992-09-01), Ohnaka et al.
patent: 5189680 (1993-02-01), Kimura
patent: 5268328 (1993-12-01), Mori et al.
patent: 5304507 (1994-04-01), Unozawa
patent: 5441912 (1995-08-01), Tsukiji et al.
Minagawa et al, "Effect Of Cap Layer and Cooling Atmosphere On The Hole Concentration Of p(Zn)-AlGaInP Grown By Organometallic Vapor Phase Epitaxy", Journal of Crystal Growth, vol. 118, 1992, pp. 425-429.
Hamada et al, "Activation Of Zn Acceptors In AlGaInP Epitaxial Layers Grown On Misoriented Substrates By Metal Organic Chemical Vapour Deposition", Electronics Letters, vol. 28, No. 6, 1992, pp. 585-587.
Breneman R. Bruce
Fleck Linda J.
Mitsubishi Denki & Kabushiki Kaisha
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