Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2009-11-19
2011-10-25
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S402000, C438S406000, C257SE21122, C257SE21567
Reexamination Certificate
active
08043935
ABSTRACT:
An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
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Office Action (U.S. Appl. No. 12/564,973) dated Mar. 21, 2011.
Arita Yu
Isaka Fumito
Kato Sho
Shimomura Akihisa
Lee Cheung
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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