Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2008-05-06
2008-05-06
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S513000, C438S680000, C257SE21170, C257SE21320, C257SE21231, C257SE21248, C257SE21278, C257SE21293
Reexamination Certificate
active
10540720
ABSTRACT:
A semiconductor substrate (100) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a high temperature, forming a surface protection layer for blocking oxygen on the major surface, performing annealing, and then stripping off the mask and the surface protection layer. A silicon dioxide layer (102) has a first tip surface (102a) corresponding to an area where the mask has not existed and having a relatively long distance from the major surface (100a), and a second top surface (102b) corresponding to an area where the mask has existed and having a relatively short distance from the major surface (100a). As this major surface (100a) is polished by a predetermined quantity, a semiconductor substrate is provided in which only a part of a single-crystal silicon substrate is a SOI substrate.
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Kishima Koichiro
Koonath Prakash
Frommer William S.
Frommer & Lawrence & Haug LLP
Nhu David
Presson Thomas F.
Regents of the University of California
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