Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

2008-01-29

2010-12-21

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000, C438S459000, C438S474000, C438S795000, C438S798000, C257S055000, C257S063000, C257S065000, C257SE31049, C257SE29297, C257SE21182, C257S021000

Reexamination Certificate

active

07855127

ABSTRACT:
A method for manufacturing a semiconductor substrate including: epitaxially growing a silicon germanium (SiGe) film on a silicon (Si) substrate by a chemical vapor deposition method; subjecting a heat treatment to the SiGe film at a temperature of not less than 700° C. and not more than 1200° C.; implanting hydrogen ions into a surface of the SiGe film; subjecting a surface activation treatment to a main surface of at least one of the SiGe film and a support substrate; bonding main surfaces of the SiGe film and the support substrate at a temperature of not less than 100° C. and not more than 400° C.; and applying an external impact to a bonding interface between the SiGe film and the support substrate to delaminate the SiGe crystal along a hydrogen ion implanted interface of the SiGe film, thereby forming a SiGe thin film on the main surface of the support substrate.

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