Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

2005-04-14

2009-02-24

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S458000, C438S464000, C257SE21568, C257SE21570

Reexamination Certificate

active

07494899

ABSTRACT:
This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal wafer so as to form light-element bubbles along a cleavage plane parallel to the surface of the single-crystal wafer within an ion-implanted region and thereby splitting off a portion of the single-crystal wafer on an ion-implanted side.

REFERENCES:
patent: 6290804 (2001-09-01), Henley et al.
patent: 7052974 (2006-05-01), Mitani et al.
patent: 05-211128 (1993-08-01), None

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