Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

1997-05-29

1998-06-30

Niebling, John

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

148DIG12, H01L 2176

Patent

active

057733554

ABSTRACT:
A semiconductor substrate includes a semiconductor layer, where the density of an impurity is reduced by out diffusion, provided on an insulating layer. In a method for manufacturing such a semiconductor substrate, a semiconductor substrate including a high-density impurity layer at the side of its surface is bonded to another substrate having an insulating layer. Thereafter, the semiconductor substrate is removed, and the impurity density of the remaining high-density impurity layer is reduced by out diffusion.

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W. P. Maszara et al., "Epi-less bond-and-etch-back silicon-on-insulator by MeV ion implantatin", Applied Physics Letters, vol. 58, No. 24, Jun. 17, 1991, New York, U.S. pp. 2779-2781.

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