Method for manufacturing semiconductor optical integrated device

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 17, 437126, 372 45, 372 46, 372 50, 372 96, 350 9611, H01L 2120, H01L 21203, H01L 21205

Patent

active

048206555

ABSTRACT:
A method for manufacturing a semiconductor optical integrated device in which a semiconductor element A having an optical waveguide region and a semiconductor element B having another optical waveguide region are integrated on a single substrate. In accordance with the present invention, there is provided steps of growing the optical waveguide region of the semiconductor element A and a protective layer therefor are grown on the entire area of the substrate surface, selectively removing them from the substrate surface in the region to be ultimately occupied by the semiconductor element B, and forming in the region the optical waveguide region of the semiconductor element B through crystal growth.

REFERENCES:
patent: 4136928 (1979-01-01), Logan et al.
patent: 4553239 (1985-11-01), Akiba et al.
patent: 4573158 (1986-02-01), Utaka et al.
patent: 4575851 (1986-03-01), Seki et al.
patent: 4589117 (1986-05-01), Utaka et al.
patent: 4618959 (1986-10-01), Mito
patent: 4622674 (1986-11-01), Mito
patent: 4633474 (1986-12-01), Akiba et al.
patent: 4648096 (1987-03-01), Akiba et al.
patent: 4653058 (1987-03-01), Akiba et al.
patent: 4653059 (1987-03-01), Akiba et al.
patent: 4665527 (1987-05-01), Akiba et al.
Suematsu et al., "A Multihetero-AlGaAs Laser With Integrated Twin Guide", Proc. IEEE, 1975, 63, p. 208.
Noda et al., "High Power Operation of a Ridge-Waveguide AlGaAs/GaAs Distributed Feedback Laser", Electron Letters, Mar. 1986, vol. 22, No. 6, pp. 310-312.
Suzuki et al., "Dynamic Spectral Width of an InGaAsP/InP Electroabsorption Light Modulator Under High-Frequency Large-Signal Modulation", Electron Letters, Mar. 1986, vol. 22, No. 6, pp. 312-313.
Utaka et al., "1.5-1.6 .mu.m GaInAsP/InP Integrated Twin-Guide Lasers With First-Order Distributed Bragg Reflectors", Electron Letters, Jun. 1980, vol. 16, No. 12, pp. 455-456.
Abe et al., "GaInAsP/InP Integrated Laser With Butt-Jointed Built-in Distributed-Bragg Reflection Waveguide", Electron Letters, Dec. 1981, vol. 17, No. 25, pp. 945-947.
Suzuki et al., "Monolithic Integration of InGaAsP/InP Distributed-Feedback Laser and Electroabsorption Modulator By Vapor-Phase Epitaxy," OFC/IOOC, 1987, Technical Digest, Reno, Nev., 19-22 Jan. 1987.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor optical integrated device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor optical integrated device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor optical integrated device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-667055

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.