Method for manufacturing semiconductor optical device using...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

Reexamination Certificate

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C438S778000, C257SE21090

Reexamination Certificate

active

07871840

ABSTRACT:
The present invention provides a semiconductor laser diode prevents not only the adhesion of the upper electrode but the heat dissipation of the mesa from degrading. The laser diode includes a substrate, portion of which forms a mesa including an active layer, an insulating layer formed so as to bury the mesa, and an electrode formed on the mesa and the insulating layer. This insulating layer may be selected from SiO2, SiON, SiN, Al2O3or ZrO2and formed by the inductive coupling plasma-enhanced chemical vapor deposition (ICP-CVD) technique.

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