Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2008-05-01
2009-11-17
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S041000, C438S042000, C257SE21238, C257SE21461, C257SE21326
Reexamination Certificate
active
07618836
ABSTRACT:
A method for manufacturing a semiconductor optical device comprises: forming a groove on a first semiconductor layer; forming a second semiconductor layer containing aluminum in the groove; forming a third semiconductor layer on the first semiconductor layer and the second semiconductor layer; forming an insulating layer on the third semiconductor layer covering the region opposite the second semiconductor layer; forming a stripe-shaped structure by etching the first semiconductor layer and the third semiconductor layer without exposing the second semiconductor layer, using the insulating layer as a mask; and burying the stripe-shaped structure with burying layers.
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Everhart Caridad M
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
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