Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-11-29
2008-11-25
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257S098000, C385S129000, C385S130000, C385S131000, C385S132000, C372S007000
Reexamination Certificate
active
07456039
ABSTRACT:
An SiO2film is formed on a semiconductor layer stack, the SiO2film having a thickness da and an etch rate Ra in buffered (BHF). A waveguide ridge with the SiO2film thereon is formed using a resist pattern76. An SiN film is formed on top and both sides of the waveguide ridge, while leaving the resist pattern in place, the SiN film having a thickness db and an etch rate Rb in BHF, where 1<(db/Rb)/(da/Ra). Then the resist pattern and the overlying portion of the SiN film are removed by lift-off to form an opening in the SiN film. Wet etching for a predetermined period of time with BHF removes the SiO2film from the waveguide ridge, while leaving the SiN film in place.
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Kawasaki Kazushige
Oka Takafumi
Shiozawa Katsuomi
Jones Eric W
Le Thao X
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
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