Method for manufacturing semiconductor optical device

Details Method for manufacturing semiconductor optical device Method for manufacturing semiconductor optical device

2011-02-01

2011-02-01

Richards, N. Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

Reexamination Certificate

active

07879635

ABSTRACT:
A method for manufacturing a laser diode includes: providing a semiconductor structure in which semiconductor layers are laminated; forming a waveguide ridge in the layers; forming an SiO2film over the entire surface; forming a second resist pattern covering the SiO2film in channels adjacent the waveguide ridge such that top surfaces of the second resist pattern in the channels are higher than the top surface of a p-GaN layer in the waveguide ridge and lower than the top surface of the SiO2film on the top of the waveguide ridge, the second resist pattern exposing the top surface of the SiO2film on the top of the waveguide ridge; removing the SiO2film, using the second resist pattern as a mask, to expose the top surface of the p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.

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