Method for manufacturing semiconductor nonvolatile memory device

Details Method for manufacturing semiconductor nonvolatile memory device Method for manufacturing semiconductor nonvolatile memory device

1995-09-26

1997-07-15

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 70, 148DIG157, H01L 218247

Patent

active

056482850

ABSTRACT:
In a method for manufacturing a semiconductor memory device including a plurality of field areas, a plurality of electrode areas, a plurality of source areas and drain areas sunrounded by the field areas and the electrode areas, before forming field insulating layers for isolating the source and drain regions, impurities are introduced into the field areas between the source regions, to create an additional source region below the field insulating layer for isolating the source regions. The additional source regions are linked between the source regions.

REFERENCES:
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5273926 (1993-12-01), Tigelaar
patent: 5480819 (1996-01-01), Huang

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