Method for manufacturing semiconductor light emitting device

Details Method for manufacturing semiconductor light emitting device Method for manufacturing semiconductor light emitting device

2008-03-21

2009-06-16

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making conductivity modulation device

C438S030000, C438S091000, C257SE21320, C257SE21126, C257SE21352, C257SE21365

Reexamination Certificate

active

07547587

ABSTRACT:
A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from a location opposite the light-emitting units, and offset from a desired cleavage line intersecting the light-emitting units. A scratch is formed on the desired cleavage line. The wafer is cleaved, originating on the scratch, along the cleavage line orientation, in the direction from the dummy pattern, toward the light-emitting units.

REFERENCES:
patent: 6774968 (2004-08-01), Hagiwara
patent: 7088416 (2006-08-01), Hagiwara
patent: 2002/0080319 (2002-06-01), Hagiwara
patent: 2004/0239858 (2004-12-01), Hagiwara
patent: 7-86687 (1995-03-01), None
patent: 10-144989 (1998-05-01), None

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