Method for manufacturing semiconductor laser optical device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S031000, C438S046000

Reexamination Certificate

active

06977186

ABSTRACT:
A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III–V compound semiconductor on the etching stop layer. An etching rate for the etching stop layer by dry etching is less than an etching rate for the second semiconductor layer.

REFERENCES:
patent: 5583880 (1996-12-01), Shakuda
patent: 5757835 (1998-05-01), Ono et al.
patent: 6238947 (2001-05-01), Shakuda
patent: 6323052 (2001-11-01), Horie et al.
patent: 6503769 (2003-01-01), Nakamura et al.
patent: 2002/0001864 (2002-01-01), Ishikawa et al.
patent: 2002/0167018 (2002-11-01), Nakamura et al.
S. ITO et al., “Light Confinement of Ridge-geometry InGaN based Laser Diode”, Japanese Journal of Applied Physics 61, p. 325, 7p-L-4, Sep. 2000.
Y. Lacroix et al., “Real-time etching depth monitoring for GaN-based laser diodes”, Japanese Journal of Applied Physics 47, p. 378, 30a-YQ-7 Mar. 2000.
S. Tanaka et al., “Nano-masking effects during GaN quantum dot formation”, Japanese Journal of Applied Physics 46, P. 393, 28p-N-6, Mar. 1999.
S. Tanaka et al., Anti-Surfactant in III-Nitride Epitaxy-Quantum Dot Formation and Dislocation Termination, Japanese Journal of Applied Physics, vol. 39, (2000), pp. L831-L834, Part 2, No. 8B. Aug. 15, 2000.
J. Y. Chen et al., “Electrical and optical changes in the surface of reactively ion etched n-GaN”, Solid-state electronics 43, (1999), pp. 649-652.
C.C. Yang et al., “Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor deposition”, Journal of Applied Physics, vol. 85, No. 12, Jun. 15, 1999, pp. 8427-8431.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor laser optical device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor laser optical device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor laser optical device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3514733

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.