Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-01-19
2009-06-23
Cao, Phat X (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S027000, C257SE33023
Reexamination Certificate
active
07550304
ABSTRACT:
A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure to form a mesa; exposing the mesa to an oxygen-containing ambient forming an oxide layer on the mesa; removing a first part of the oxide layer from the mesa at a temperature lower than a critical temperature at which bonds between atoms of the oxide layer become stronger, by etching with a gas; removing the remainder of the oxide layer from the mesa at a temperature higher than the critical temperature by etching with a gas; and forming a burying layer coating the mesa.
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Nagira Takashi
Watatani Chikara
Cao Phat X
Doan Nga
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
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