Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-01-22
2009-06-09
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S094000, C438S412000, C438S681000, C438S761000, C438S763000
Reexamination Certificate
active
07544535
ABSTRACT:
The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a semiconductor material containing Al; etching the semiconductor laminated structure to form a mesa; forming a first burying layer at a first growing temperature so as to coat the side of the mesa; and forming a second burying layer at a second growing temperature higher than the first growing temperature on the first burying layer to bury the circumference of the mesa.
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S. Gouraud, et al., “High Speed AlGaInAs Multiple-Quantum-Well Electroabsorption Modulator Buried and Planarized with Semi-insulating Fe-Doped InP grown by Chloride assisted LP-MOVPE”, Proceedings, 17thInt. Conf. on IPRM, May 2005, 4 pages.
Nagira Takashi
Ota Toru
Watatani Chikara
Jones Eric W
Le Thao X
Mitsubishi Electric Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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