Method for manufacturing semiconductor laser device

Details Method for manufacturing semiconductor laser device Method for manufacturing semiconductor laser device

2005-10-28

2008-05-13

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S039000

Reexamination Certificate

active

07371595

ABSTRACT:
A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.

REFERENCES:
patent: 2005/0100067 (2005-05-01), Tsunoda
patent: 2002-198614 (2002-07-01), None
patent: 2004055587 (2004-02-01), None

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