Method for manufacturing semiconductor laser device

Details Method for manufacturing semiconductor laser device Method for manufacturing semiconductor laser device

2007-03-20

2007-03-20

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S041000, C438S060000, C438S075000, C438S694000, C438S745000

Reexamination Certificate

active

10689629

ABSTRACT:
Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ridge structure by selectively etching the second conductive-type clad layer; (c) forming a current blocking layer around the ridge structure, the current blocking layer having protrusions on the upper surface thereof adjacent to the ridge structure, and an amorphous and/or polycrystalline layer on a partial area thereof; and (d) removing at least the amorphous and/or polycrystalline layer from the current blocking layer, and wet-etching the upper surface of the current blocking layer so that the protrusions are reduced in size.

REFERENCES:
patent: 5445993 (1995-08-01), Ahn et al.
patent: 5478775 (1995-12-01), Fujii
patent: 6924162 (2005-08-01), Watanabe et al.
patent: 6955994 (2005-10-01), Watanabe et al.
patent: 01-232784 (1989-09-01), None
patent: 02-260485 (1990-10-01), None
patent: 04-82291 (1992-03-01), None
patent: 06-69599 (1994-03-01), None
patent: 2002-198616 (2002-07-01), None
patent: 2002-246684 (2002-08-01), None
patent: 2003-010083 (2003-02-01), None
Japanese Patent Office Office Action mailed May 23, 2006.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3738288