Method for manufacturing semiconductor laser apparatus

Details Method for manufacturing semiconductor laser apparatus Method for manufacturing semiconductor laser apparatus

2005-07-19

2005-07-19

Chaudhari, Chandra (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S615000

Reexamination Certificate

active

06919216

ABSTRACT:
On a mount surface portion of a semiconductor laser device, a first bonding layer is so formed that a first region near a light-emitting area is exposed. On a mount surface portion of a sub mount is formed a second bonding layer having a melting point T2lower than a melting point T1of the first bonding layer. The first and second bonding layers are heated in a mutually pressed state at a temperature T lower than the melting point T1of the first bonding layer but higher than the melting point T2of the second bonding layer (T1>T>T2) to bond the semiconductor laser device to the sub mount. When the semiconductor laser device is bonded to the sub mount, the first region serves as the non-bonding area.

REFERENCES:
patent: 6027957 (2000-02-01), Merritt et al.
patent: 6268230 (2001-07-01), Kuniyasu
patent: 6562693 (2003-05-01), Ichikawa et al.
patent: 6677184 (2004-01-01), Kohashi
patent: 63-308991 (1988-12-01), None
patent: 1-259587 (1989-10-01), None
patent: 5-291696 (1993-11-01), None

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