Method for manufacturing semiconductor laser

Details Method for manufacturing semiconductor laser Method for manufacturing semiconductor laser

2011-05-17

2011-05-17

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S029000, C438S031000, C438S032000, C438S040000, C438S045000, C257SE21097

Reexamination Certificate

active

07943407

ABSTRACT:
A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching.

REFERENCES:
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patent: 5763291 (1998-06-01), Motoda et al.
patent: 61-216374 (1986-09-01), None
patent: 09-018085 (1997-01-01), None
patent: 2005-216990 (2005-08-01), None
patent: 2005-347630 (2005-12-01), None
patent: 2008-235790 (2008-10-01), None
patent: 2008-277492 (2008-11-01), None
Japanese Office Action issued Oct. 19, 2010 for corresponding Japanese Application No. 2008-318052.

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