Method for manufacturing semiconductor integrated circuit device

Details Method for manufacturing semiconductor integrated circuit device Method for manufacturing semiconductor integrated circuit device

1993-08-12

1994-10-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437 31, 437 99, 437132, 437162, 148DIG9, H01L 21265

Patent

active

053568214

ABSTRACT:
A semiconductor integrated circuit according to the present invention comprises a semiconductor substrate, a plurality of MOS field effect transistors each formed on a surface region of the semiconductor substrate and having source and drain regions, a gate insulating film formed on a region between the source and drain regions, and a gate electrode formed on the gate insulating film. The gate electrode includes a polycrystalline SiGe-mixed crystal which is expressed by Si.sub.1-x Ge.sub.x (1>x>0).

REFERENCES:
patent: 4879255 (1989-11-01), Deguchi et al.
patent: 5059544 (1991-10-01), Burghartz et al.
patent: 5250448 (1993-10-01), Hamasaki et al.

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