Method for manufacturing semiconductor integrated circuit...

Details Method for manufacturing semiconductor integrated circuit... Method for manufacturing semiconductor integrated circuit...

2007-01-16

2007-01-16

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S257000, C438S265000, C438S706000

Reexamination Certificate

active

10631463

ABSTRACT:
A method for manufacturing circuit structures integrated in a semiconductor substrate that includes regions, in particular isolation regions, includes the steps of:—depositing a conductive layer to be patterned onto the semiconductor substrate;—forming a first mask of a first material on the conductive layer;—forming a second mask made of a second material that is different from the first and provided with first openings of a first size having spacers formed on their sidewalls to uncover portions of the first mask having a second width which is smaller than the first;—partly etching away the conductive layer through the first and second masks such to leave grooves of the second width;—removing the second mask and the spacers; and—etching the grooves through the first mask to uncover the regions provided in the substrate and form conductive lines.

REFERENCES:
patent: 5358893 (1994-10-01), Yang et al.
patent: 5893748 (1999-04-01), Lin
patent: 5998287 (1999-12-01), Huang
patent: 6242795 (2001-06-01), Chang
patent: 6670260 (2003-12-01), Yu et al.
patent: 2001/0015454 (2001-08-01), Lee et al.
patent: 2001/0041309 (2001-11-01), Kim et al.

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