Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-02-22
2005-02-22
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S462000, C438S464000, C438S455000
Reexamination Certificate
active
06858518
ABSTRACT:
A method for manufacturing a semiconductor integrated circuit includes the steps of forming a semiconductor element on a semiconductor substrate attaching a film member on the semiconductor element, separating the semiconductor element together with the film member from the semiconductor substrate, and applying an adhesive composition to at least one of the semiconductor element and a member on which the semiconductor element is mounted. The method may further include the steps of temporary fixing the semiconductor element and the member, separating the film member from the semiconductor element, and completely fixing the semiconductor element and the member. In the method, it is preferable that the adhesive composition include the fine powder of diamond, silicon, gold, silver, copper, aluminum nitride, etc.
REFERENCES:
patent: 5073230 (1991-12-01), Maracas et al.
patent: 5286335 (1994-02-01), Drabik et al.
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5401983 (1995-03-01), Jokerst et al.
patent: 5465009 (1995-11-01), Drabik et al.
patent: 5827751 (1998-10-01), Nuyen
patent: 6033995 (2000-03-01), Muller
patent: 6214733 (2001-04-01), Sickmiller
patent: A 63-70257 (1988-03-01), None
patent: A 63-175860 (1988-07-01), None
patent: A 2-135359 (1990-05-01), None
patent: A 2-135361 (1990-05-01), None
patent: A 2-209988 (1990-08-01), None
patent: A 3-37992 (1991-02-01), None
patent: A 3-152184 (1991-06-01), None
patent: A 6-151720 (1994-05-01), None
patent: A 9-503622 (1997-04-01), None
patent: A 2000-58562 (2000-02-01), None
patent: WO 9509438 (1995-04-01), None
Hiroshi Wada, “How to integrate optical devices and electronic devices?”, -Interconnection key component techniques-, Electronics, Oct. 2000 w/English translation.
Takamori et al., “Interchip Optical Interconnection Using Planar Type Photonic Circuit and Optoelectronic Integrated Devices”, Japan Institute of Electronics, Information and Communication Engineers, vol. J84-C, No. 9, pp. 784-792, 2001 w/English translation.
Ali Ersen et al., “Direct Bonding of GaAs Films on Silicon Circuits by Epitaxial Liftoff, ” Solid-State Electronics, vol. 36, No. 12, pp. 1731-1739, (Dec. 1993).
C. Kaneshiro et al., “Transfer and Bonding Process of Semiconductor Coupled SA W Device Suited for Mass-Production, ” IEEE Ultrasonics Symposium Proceedings, pp. 221-224, (Oct. 2001).
H. Nakanishi et al., “Studies on SiO2-SiO2Bonding With Hydrofluoric Acid —Room Temperature and Low Stress Bonding Technique for MEMS, ” Micro Electro Mechanical Systems, 1998, MEMS 98, Proceedings, The Eleventh Annual International Workshop, pp. 609-614, (Jan. 1998).
H. Nguyen et al., “A Substrate-Independent Wafer Transfer Technique for Surface-Micromachined Devices, ” Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems, pp. 628-632, (Oct. 2000).
S. Shoji et al., “Low-Temperature Anodic Bonding Using Lithium Aluminosilicate-β-quartz Glass Ceramic, ” Sensors and Actuators A, vol. 64, No. 1, pp. 95-100, (1998).
Le Dung A.
Oliff & Berridg,e PLC
Seiko Epson Corporation
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