Method for manufacturing semiconductor devices using heat-treatm

Fishing – trapping – and vermin destroying

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29 2501, 437982, H01L 21469

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053875575

ABSTRACT:
A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.

REFERENCES:
patent: 3602192 (1971-08-01), Grochowski
patent: 4857689 (1989-08-01), Lee
patent: 4950870 (1990-08-01), Mitsuhashi et al.
patent: 4962063 (1990-10-01), Maydan et al.
patent: 4962065 (1990-10-01), Brown et al.
patent: 4979464 (1990-12-01), Kunze-Concewitz
patent: 5029554 (1991-07-01), Miyashita et al.
patent: 5043300 (1991-08-01), Nulman
patent: 5058526 (1991-10-01), Matsushita et al.
patent: 5116784 (1992-05-01), Ushikawa
patent: 5178639 (1993-01-01), Nishi
J. Appl. Phys., vol. 63, No. 8, 15 Apr. 1988, R60, R99-104.

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