Method for manufacturing semiconductor devices having oxide film

Details Method for manufacturing semiconductor devices having oxide film Method for manufacturing semiconductor devices having oxide film

1970-09-14

1976-12-28

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29585, B01J 1700, 2 9

Patent

active

039992829

ABSTRACT:
A silicon crystal body having a major surface lying parallel to a {110} or {100} crystal plane is prepared. A silicon oxide film is formed on the major surface by heating the body in an atmosphere containing steam. Then, an aluminum layer is formed on the oxide film. Thereby the amount of surface donors induced in the major surface of the body by the existence of the oxide film is smaller than the amount of induced surface donors to be obtained in a crystal plane of a like silicon body but lying parallel to a {111} plane covered with a like oxide film. The amount of induced surface donors is further reduced by subjecting said body to a heat treatment under application across said oxide film of such a voltage as that which renders the aluminum layer provided on the oxide film negative polarity. This invention is applied to the manufacture of, for example, MOS field effect transistors, MOS diodes and so-called planar transistors.

REFERENCES:
patent: 3184657 (1965-05-01), Moore
patent: 3349474 (1967-10-01), Rauscher
patent: 3349475 (1967-10-01), Marinace
patent: 3387358 (1968-06-01), Heiman
patent: 3403307 (1968-09-01), Rindner
Journal of the Electrochemical Society, June 1963, pp. 527-533, "The Oxidation of Silicon . . . " by Deal.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor devices having oxide film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor devices having oxide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor devices having oxide film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-141124