Method for manufacturing semiconductor devices

Metal working – Method of mechanical manufacture – Assembling or joining

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29576E, H01L 21302

Patent

active

040730557

ABSTRACT:
A method for the manufacture of semiconductor devices comprises the steps of forming a number of mutually electrically isolated semiconductor islands on an insulating substrate and cutting a semiconductor wafer, made of semiconductor elements and substrate, along its dicing line to provide a number of semiconductor chips, the method characterized in that additional semiconductor islands are formed on the insulating substrate simultaneously with, or after, the formation of the first-mentioned semi-conductor islands so that each substantially surrounds the chip. The method permits very easy mask alignments for photoengraving as well as a clear judgment as to whether or not the formation of contact openings has been completed.

REFERENCES:
patent: 3608186 (1971-09-01), Hutson
patent: 3816906 (1974-06-01), Falckenberg
patent: 3903591 (1975-09-01), Wenzig et al.
patent: 3965568 (1976-06-01), Gooch

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