Method for manufacturing semiconductor device with reduced...

Details Method for manufacturing semiconductor device with reduced... Method for manufacturing semiconductor device with reduced...

2007-11-20

2009-11-10

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S652000, C257SE21575

Reexamination Certificate

active

07615474

ABSTRACT:
A method for manufacturing a semiconductor device includes (a) forming a conductive film on a first surface having an electrode of a semiconductor substrate having an integrated circuit formed therein, the electrode being electrically coupled to the integrated circuit, such that the electrode is covered, forming a plating resist layer on the conductive film such that the plating resist layer has an opening portion exposing part of the conductive film, and forming a metal layer on the exposed part from the plating resist layer of the conductive film by electrolytic plating, the electrolytic plating being performed by applying an electric current to the conductive film; (b) removing the plating resist layer after the step (a); (c) forming a resin layer on a second surface opposite to the first surface of the semiconductor substrate after the step (a); and (d) removing the exposed part from the metal layer of the conductive film by etching with the metal layer as a mask while etching a surface of the metal layer by the etching, after the steps of (a), (b) and (c).

REFERENCES:
patent: 2002/0063332 (2002-05-01), Yamaguchi et al.
patent: 2004/0056340 (2004-03-01), Jobetto
patent: 2006/0276021 (2006-12-01), Hee
patent: 2007/0045793 (2007-03-01), Tanaka
patent: 2000-332034 (2000-11-01), None
patent: 2004-134480 (2004-04-01), None
patent: 2004-179507 (2004-06-01), None
patent: 2004-241673 (2004-08-01), None
patent: 2007-115770 (2007-05-01), None

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