Method for manufacturing semiconductor device with...

Details Method for manufacturing semiconductor device with... Method for manufacturing semiconductor device with...

2006-04-11

2006-04-11

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S041000, C438S388000, C438S700000, C438S710000

Reexamination Certificate

active

07026248

ABSTRACT:
In a method for manufacturing a semiconductor device of the present invention, a portion of a first epitaxial layer formed in a trench in a silicon substrate is removed by vapor phase etching using a halogenated compound or hydrogen. In this removing process, the portion of the first epitaxial layer is removed at a predetermined temperature higher than that during epitaxial growth of the first epitaxial layer and at a predetermined pressure higher than that during epitaxial growth of the first epitaxial layer. Therefore, stress that would otherwise be concentrated at a bottom portion of the trench is relaxed because rearrangement of the silicon atoms increases.

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U.S. Appl. No. 09/696,951, filed Oct. 27, 2000, Yamauchi.
U.S. Appl. No. 09/688,154, filed Oct. 16, 2000, Yamaguchi.

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