Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-05-14
1984-02-28
Saba, W. G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29580, 29591, 148174, 148175, 148187, 148188, 156628, 156647, 156649, 156657, 357 35, 357 50, 357 59, 357 92, H01L 21225, H01L 21302
Patent
active
044334702
ABSTRACT:
A method of manufacturing a semiconductor device wherein grooves are formed between vertical type-npn transistors and insulating oxide layers are formed on the bottoms of the grooves, thereby preventing parasitic p-n junctions, which is characterized in that said grooves are formed by using as a mask a conductive pattern containing an impurity for forming an impurity region or by using as a mask an insulating film formed by the annealing of the conductive pattern.
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Berger et al., "Investigation of Intrinsic Delay . . . MTL/I.sup.2 L", IEEE J. Solid-State Circuits, vol. SC-14, No. 2, Apr. 1979, pp. 327-336.
Kameyama Shuichi
Kanzaki Koichi
Sasaki Yoshitaka
Saba W. G.
Tokyo Shibaura Denki Kabushiki Kaisha
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