Method for manufacturing semiconductor device utilizing...

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

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C438S014000, C438S018000, C438S225000

Reexamination Certificate

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07043328

ABSTRACT:
A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main body wafer manufacturing process for manufacturing a wafer on which a semiconductor device to be completed as a product is formed and a monitor wafer manufacturing process for manufacturing a wafer on which a monitor element is formed, the processes sharing a monitoring step alone, the main body wafer manufacturing process including a variation reduction step, the monitor wafer manufacturing process including a quality check step and a condition setting step.

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“Partially Depleted SOI NMOSFET's with Self-Aligned Polysilicon Gate Formed on the Recessed Channel Region”□□- Lee et al—IEEE Electron Device Letters, vol. 18, No. 5, May 1997.
“The Challenges of Nitride Spacer Processing for a .35um CMOS Technology”—Goss et al—IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 1997.

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