Method for manufacturing semiconductor device using spin on glas

Details Method for manufacturing semiconductor device using spin on glas Method for manufacturing semiconductor device using spin on glas

1998-01-05

2000-06-20

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257760, 257306, H01L 21321, H01L 23535

Patent

active

06078105&

ABSTRACT:
In a method for manufacturing a semiconductor device, a dummy pattern layer is formed on a layer which is located below an insulating layer on which a spin on glass (SOG) layer is formed. The insulating layer is flattened by etching back the SOG layer. Then, a contact hole is perforated in the insulating layer, the dummy pattern layer and the layer, and a conductive layer is buried in the contact hole.

REFERENCES:
patent: 5117273 (1992-05-01), Stark et al.
patent: 5479054 (1995-12-01), Tottori

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