Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-08-29
2009-06-02
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
C216S067000, C216S017000, C216S041000, C438S717000, C438S719000, C438S723000, C438S745000, C438S756000, C257SE21029, C257SE21206, C257SE21256, C257SE21314
Reexamination Certificate
active
07541286
ABSTRACT:
A semiconductor device manufacturing method using a KrF light source is disclosed. Embodiments relate to a method for manufacturing a semiconductor device including forming an oxide film over a semiconductor substrate. A gate conductor may be formed over the oxide film. An antireflective film may be formed over the gate conductor. A photoresist film may be formed over the antireflective film. The photoresist film may be photo-etched, thereby forming a first photoresist film pattern having a first line width. The antireflective film may be etched, using the first photoresist film pattern as a mask, thereby forming an antireflective film pattern. The first photoresist film pattern may be simultaneously laterally etched, thereby forming a second photoresist film pattern having a second line width corresponding to a final design value for the gate conductor. The gate conductor and the oxide film may be etched, using the second photoresist film pattern and the antireflective film pattern as a mask, thereby forming a gate conductor pattern and an oxide film pattern. The photo-etching to form the first photoresist film pattern may be executed, using a KrF light source. Accordingly, it is possible to provide a method for manufacturing a semiconductor device for a 100 nm line width or lower, using a KrF light source, without using an ArF light source requiring the use of expensive equipment and a specific photoresist material.
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Dongbu Hi-Tek Co., Ltd.
Lebentritt Michael S
Sherr & Vaughn, PLLC
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