Method for manufacturing semiconductor device using...

Details Method for manufacturing semiconductor device using... Method for manufacturing semiconductor device using...

2007-06-25

2010-06-15

Dickey, Thomas L (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C257SE21035, C257SE21351, C257S416000

Reexamination Certificate

active

07736985

ABSTRACT:
The performance of a sensor in a semiconductor device can be improved. A plurality of oscillators forming an ultrasonic sensor are arranged on a main surface of a semiconductor chip. A negative-type photosensitive insulating film which protects the oscillators is deposited on an uppermost layer of the semiconductor chip. At the time of exposure for forming an opening in the photosensitive insulating film, the semiconductor chip is divided into a plurality of exposure areas and exposed, and then, the exposure areas are jointed so that the entire area is exposed. At this time, a stitching exposure area is arranged so that a center of the stitching exposure area in a width direction in the joint portion of the adjacent exposure areas is positioned at a center of a line which connects centers of oscillators located above and below the stitching exposure area.

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Knight et al., “Fabrication and Characterization of cMUTs for Forward Looking Intravascular Ultrasound Imaging”, IEEE Ultrasonics Symposium, 2003, p. 577-580.

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