Method for manufacturing semiconductor device, semiconductor...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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C438S166000

Reexamination Certificate

active

08048771

ABSTRACT:
A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.

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