Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-11-21
2011-11-01
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S166000
Reexamination Certificate
active
08048771
ABSTRACT:
A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.
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Sakurada Yujiro
Yokoi Tomokazu
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Bradley K
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